Samsung 16GB DDR3-1866 LP ECC REG Server Memory Module

★★★★★ 4.4 101 reviews

US$3.60
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Product details

Management number 241242188 Release Date 2026/07/17 List Price US$3.60 Model Number 241242188
Category
Overview

The Samsung M393B2G70EB0-CMA is a 16 GB DDR3 server memory module designed to deliver reliable performance in demanding enterprise environments. Operating at 1866 MT/s, this registered DIMM with ECC provides enhanced signal stability and automatic error correction, making it well suited for database servers, virtualization hosts, and other critical applications where data integrity is essential. Its dual-voltage capability allows operation at either 1.5 V or 1.35 V, offering flexibility to optimize power consumption and thermal output in dense server configurations.

Key features
  • Registered DIMM design reshapes clock, command, and control signals to reduce electrical noise and maintain signal integrity across multiple memory modules.
  • Error Correcting Code (ECC) with an 8-bit parity lane detects and corrects single-bit errors automatically, preventing data corruption during operation.
  • Dual-voltage operation supports both 1.5 V and 1.35 V, enabling lower power consumption and heat generation in compatible systems.
  • Dual-rank 2 R × 4 architecture maximizes memory capacity while fitting standard 240-pin DDR3 server slots.
  • Optimized for virtualization clusters, in-memory analytics, and high-traffic web servers requiring consistent throughput and data reliability.
Key specs
  • Capacity: 16 GB
  • Memory type: DDR3 Registered DIMM (RDIMM) with ECC
  • Data rate: 1866 MT/s
  • Voltage: 1.5 V / 1.35 V dual-voltage support
  • Rank and organization: Dual-rank (2 R × 4)
  • Pin count: 240-pin
Connectivity and compatibility

This memory module is compatible with standard DDR3 server motherboards featuring 240-pin DIMM slots. Its registered design ensures stable operation in multi-DIMM configurations, making it a strong choice for servers that require high memory capacity and reliability. The dual-voltage feature allows it to fit into systems that support either standard or low-voltage DDR3 memory, providing flexibility for various datacenter power and thermal requirements.

Performance and reliability

By integrating a register to buffer signals and an ECC mechanism to detect and correct errors, this module maintains data integrity even under heavy workloads. This reduces the risk of system crashes or data loss, which is critical for enterprise applications. The module’s ability to operate at a high data rate of 1866 MT/s supports demanding multitasking and I/O operations, ensuring smooth performance in virtualized and database environments.

Ideal uses and environments

This Samsung memory module fits well in enterprise servers, blade enclosures, and edge computing systems where space and power efficiency are important. It is particularly suited for IT professionals managing virtualization clusters, in-memory analytics engines, or web servers that require dependable memory performance and error correction. Its power-saving capabilities also make it a practical option for datacenters aiming to reduce energy consumption without sacrificing speed or reliability.


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